IEEE Electron Device Letters
Source
ISSNs 0741-3106, 1558-0563
Source type: journal
Alternate names Electron device letters, Institute of Electrical and Electronics Engineers electron device letters, I.E.E.E. electron device letters
Fully open access: No
In DOAJ: No
2yr mean citedness: 3.238
H-index: 195
I10-index: 8,795
Works count: 14,880
Citations count: 403,800
High-performance heat sinking for VLSI
1981 · David B. Tuckerman, R. F. W. Pease · IEEE Electron Device Letters
Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec
2007 · Woo Young Choi, Byung‐Gook Park, et al. · IEEE Electron Device Letters
30-W/mm GaN HEMTs by Field Plate Optimization
2004 · Yifeng Wu, A. Saxler, et al. · IEEE Electron Device Letters