IEEE Transactions on Electron Devices
Source
ISSNs 0018-9383, 1557-9646
Source type: journal
Alternate names Electron devices, Institute of Electrical and Electronics Engineers transactions on electron devices, Transactions on electron devices
Fully open access: No
In DOAJ: No
2yr mean citedness: 2.804
H-index: 268
I10-index: 15,250
Works count: 29,050
Citations count: 749,200
Large-signal analysis of a silicon Read diode oscillator
1969 · D.L. Scharfetter, H.K. Gummel · IEEE Transactions on Electron Devices
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
2000 · Chenming Hu, Jeffrey Bokor, et al. · IEEE Transactions on Electron Devices
Double-Gate Tunnel FET With High-$\kappa$ Gate Dielectric
2007 · Kathy Boucart, Adrian Ionescu · IEEE Transactions on Electron Devices