ON Semiconductor (China)
High-Voltage Quasi-Vertical GaN Junction Barrier Schottky Diode With Fast Switching Characteristics
2021 · Feng Zhou, Weizong Xu, et al. · IEEE Electron Device Letters
Analysis and Design Optimization of Diode Front-End Rectifier Passive Components for Voltage Source Inverters
2008 · Fei Wang, Gang Chen, et al. · IEEE Transactions on Power Electronics
1.2 kV/25 A Normally off P-N Junction/AlGaN/GaN HEMTs With Nanosecond Switching Characteristics and Robust Overvoltage Capability
2021 · Feng Zhou, Weizong Xu, et al. · IEEE Transactions on Power Electronics